PART |
Description |
Maker |
GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
RJH60D1DPE-00-J3 RJH60D1DPE |
16 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3 Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D3DPE-00-J3 RJH60D3DPE |
30 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3 Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D0DPM RJH60D0DPM-00-T1 |
Silicon N Channel IGBT Application: Inverter 45 A, 600 V, N-CHANNEL IGBT
|
Renesas Electronics Corporation
|
MIG20J906E MIG20J906EA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
MIG25Q806H |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
MBM300GS12AW |
IGBT Module Silicon N-Channel IGBT
|
Hitachi
|
MG75J1ZS40 E002382 |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
2SH13 |
Silicon N-Channel IGBT Silicon N-Channel IGBT 硅N沟道IGBT IGBTs
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|